Integrated circuit inductor with integrated vias

ABSTRACT

Integrated circuit inductors ( 5 ) are formed by interconnecting various metal layers ( 10 ) in an integrated circuit with continuous vias ( 200 ). Using continuous vias ( 200 ) improves the Q factor over existing methods for high frequency applications. The contiguous length of the continuous vias should be greater than three percent of the length of the inductor ( 5 ).

FIELD OF THE INVENTION

This invention relates generally to the field of electronic devices andmore particularly to an integrated circuit inductor and method forfabricating the same.

BACKGROUND OF THE INVENTION

Integrated circuits comprise electronic devices such as transistorsformed in a semiconductor substrate. The interconnection of theseelectronic devices to form the completed circuit is accomplished byforming metal interconnect lines in dielectric layers above thesemiconductor. The metal lines are patterned to produce the requiredcircuit interconnection. In forming the metal interconnects, adielectric layer is first formed above the semiconductor containing theelectronic devices. A first layer of patterned metal interconnect linesis then formed in the dielectric layer. The first layer of patternedmetal interconnect lines is connect to the electronic devices bycontacts formed in the dielectric layer. The contacts typically comprisecolumns of metal formed in the dielectric layer. The contacts aretypically less than 1 um square. Following the formation of the firstlayer of patterned metal interconnect lines, additional layers ofdielectric layers and patterned metal interconnect lines are formed overthe first layer of patterned metal interconnect lines. The additionallayers of patterned metal lines are interconnected to each other by viasthat are formed in the additional dielectric layers that separate thepatterned metal layers. Vias are typically on the order of less than 1um square.

In addition to the electronic devices formed in the semiconductoradditional components such as inductors are often required in integratedcircuits that require filters and oscillators. Typical integratedcircuit inductors comprise metal windings formed in dielectric layersabove the semiconductor. The metal windings of integrated circuitinductors are formed using the same layers of patterned metalinterconnect lines. Inductor performance is characterized by a quality(Q) factor with a larger Q factor being more desirable. The Q factor isa function of the operating frequency of the circuit: it increases withincreasing frequency in the metal resistance limited regime, then itfalls with increasing frequency in the substrate capacitance limitedregime. The peak frequency depends on the geometry of the inductor andis chosen near the operating frequency of the circuit. For a giveninductor geometry, since the substrate effects are typically fixed bythe CMOS requirements, the only way to increase the Q factor is byreducing the metal resistance.

One method of reducing the resistance of the inductor metal linescomprises forming the inductor using multiple layers of metal lines.This method of using multiple lines is effective in obtaining thenecessary Q factor for older technologies that used thicker metal lines,since each additional metal line greatly reduced the overall resistance.However with newer technologies, the metal lines are made thinner toreduce the minimum metal pitch, so even stacking all the available metallines does not provide low enough metal resistance for high Q.Integrated circuits require operating frequencies on the order of tensof gigahertz and the present method of forming integrated circuitinductors is no longer able to achieve the required Q factor of theinductor without the addition of additional metal layers at great cost.For example, with the five metal layers required for integrated circuitoperation, a 1.5 nH inductor operating at about 4 GHz requires a qualityfactor of about 10. Using the five available levels of metal the maximumQ factor obtainable was about 6. Adding an additional level of metal(i.e. a sixth metal level) increased the Q factor to about 13 butrequired the use of two additional photo-reticles which added great costto the process. This is therefore a need for an integrated circuitinductor and method for making the same that achieves the required Qfactor for a given operating frequency and inductance without the use ofadditional metal layers and without changing the thickness or process ofthe existing metal levels. The instant invention addresses this need.

SUMMARY OF THE INVENTION

Accordingly, a need has arisen for an integrated circuit inductor andmethod for making the same that achieves the required Q factor for agiven operating frequency and inductance without the use of additionalmetal layers and without changing the thickness or process of theexisting metal levels. The present invention provides such an inductorthat accomplishes this without the use of additional metal layers.

Generally, in one form of the invention, an integrated circuit is formedcomprising a plurality of metal layers. At least two of the plurality ofmetal layers can be interconnected using at least one continuous viabetween the metal layers to form an integrated circuit inductor of afirst length. In an embodiment the continuous via has a contiguouslength of greater than three percent of the first length of saidintegrated circuit inductor. In a further embodiment the integratedcircuit inductor comprises a spiral metal loop. In a further embodimenteach of the continuous vias has a contiguous length of greater than tenpercent of the first length of the integrated circuit inductor.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and theadvantages thereof, reference is now made to the following descriptiontaken in conjunction with the accompanying drawings, wherein likereference numerals represent like features, in which:

FIG. 1 is a drawing showing a symmetric integrated circuit inductoraccording to an embodiment of the instant invention.

FIG. 2 is a cross-sectional diagram taken through the plane AA′ of FIG.1 showing the continuous vias used to interconnect the various levels ofmetals;

FIG. 3 is a cross-sectional diagram taken through the plane BB′ of FIG.1 showing the continuous vias used to interconnect the various levels ofmetals;

FIGS. 4A-4C are cross-sections illustrating a method of forming theinductor in accordance with an embodiment of the instant invention.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 1 through FIG. 4( d) illustrates various aspects of an inductorand a method of fabricating said inductor. As described in greaterdetail below, the instant invention can be used to form an integratedcircuit inductor with an improved Q factor.

Shown in FIG. 1 is a symmetric inductor 5 according to an embodiment ofthe instant invention. The inductor 5 comprises a spiral metal loop 10formed by connecting various levels of metal in the integrated circuit.The inductor further comprises a cross-over metal portion 20 thatcompletes the spiral. The inductor is interconnected to other portionsof the integrated circuit through the leads 25. The invention is not tobe limited to the particular shape of the inductor shown in FIG. 1.Non-symmetric inductors can be formed with varying shapes within thescope of the instant invention.

Shown in FIG. 2 is a cross-section diagram taken through the plane AA′in FIG. 1. Electronic devices such as transistors are formed in asemiconductor 30. The various electronic devices formed in thesemiconductor 30 are omitted from the Figure for clarity. The electronicdevices formed in the semiconductor 30 will be interconnected withvarious levels of metal to form the integrated circuit. Typically threeto five different levels of metal will be used to form the integratedcircuit. In forming the inductor according to the instant invention someor all of the various metal levels used to interconnect the integratedcircuit will be used to form the inductor. Shown in FIG. 2 is anembodiment where four of the five existing metal levels are used to formthe inductor. As shown in FIG. 2, a first dielectric layer 40 is formedover the semiconductor 30. The first dielectric layer 40 can comprisephosphosilicate glass (PSG) or other suitable dielectric material. Shownthroughout all the dielectric layers formed in the integrated circuitare barrier layers 80 that are sometimes used in forming the variousmetal layers. The use of the barrier layers 80 is optional and thebarrier layers 80 will not be present in other embodiments. In theembodiments that contain a barrier layer 80, the barrier layer cancomprise silicon nitride or other suitable dielectric material.

Following the formation of the first dielectric layer 40, a seconddielectric layer 70 is formed. The second dielectric layer can compriseorganosilicate glass (OSG) or other suitable dielectric material. Afirst metal layer 50 is formed in the second dielectric layer 70. Inembodiments of the instant invention the first metal layer 50 comprisescopper, aluminum, or suitable metals. Metal layers 90, 100, 110, and 120comprise the second, third, fourth, and fifth levels of metalrespectively and are interconnected with the continuous vias 130, 140,and 150 to form the inductor 10. In forming the inductor using thesecond, third, fourth, and fifth metal levels, a dielectric layer 71 isformed over the first metal layer 50 and the second metal layers 90 areformed in the dielectric layer 71. Dielectric layers 72 and 73 areformed over the second metal layer 90 with the third metal layers 100being formed in dielectric layer 73. The continuous vias 130 connectingthe second metal layers 90 and the third metal layers 100 are formed indielectric layer 72. In a similar manner dielectric layers 74 and 75 areformed over the third metal layers 100 with the fourth metal layers 110being formed in dielectric layer 75. The continuous vias 140 connectingthe third metal layers 100 and the fourth metal layers 110 are formed indielectric layer 74. Finally dielectric layers 76 and 77 are formed overthe fourth metal layers 110 with the fifth metal layers 120 being formedin dielectric layer 77. The continuous vias 150 connecting the fourthmetal layers 110 and the fifth metal layers 120 are formed in dielectriclayer 77. In an embodiment of the instant invention the dielectriclayers 72, 73, 74, and 75 can comprise OSG or other suitable dielectricmaterial. In a further embodiment dielectric layers 76 and 77 cancomprise florosilicate glass (FSG) or other suitable dielectricmaterial. Metal layers 90, 100, 110, 120 and the connecting vias 130,140, and 150 can comprise copper, aluminum, or other suitable metals.FIG. 2 illustrates that each metal line 10 of the spiral inductor 10shown in FIG. 1 is comprised of four metal lines (i.e. metal layers 90,100, 110, and 120) interconnected by the continuous vias 130, 140, and150.

Different regions of the metal layers 90, 100, 110, and 120 used to formthe inductor will simultaneously be used to form the metal interconnectlines of the integrated circuit. As described previously square ornon-continuous vias are used to interconnect the various metalinterconnect lines in the integrated circuit. Inductors formed using thesquare vias will not achieve the required Q factor values required forgigahertz operation. Therefore according to the embodiment of theinstant invention illustrated in FIG. 2 continuous vias 130, 140, and150 are used to form the inductor 5. For this invention a continuous viais defined, in a first embodiment, as a via whose contiguous or unbrokenlength is at least 3% of the total length of the metal used to form theinductor. For the inductor shown in FIG. 1 the total length is definedas the distance along the metal 10 from point A to point B. An exampleof a continuous via according to the instant invention is shown by thedashed line 200 in FIG. 1. The contiguous or unbroken length of thecontinuous via 200 is clearly greater than 3% of the total length of theinductor. The continuous vias of the instant invention can also bedescribed as slots that connect the various layers of metals. In a firstembodiment of the instant invention the length of each slot is greaterthan 5% of the total length of the inductor. Further embodiments canhave continuous vias or slots whose contiguous or unbroken lengths aregreater than 5%, 10%, 15%, 20%, 50%, 75%, or 90% of the total length ofthe inductor. In addition any number of slots can be used tointerconnect the various levels of metal. In the embodiment shown inFIG. 2 two continuous vias or slots are used to interconnect each metalline 90, 100, 110, and 120. In other embodiments a single continuous viaor slot as well as multiple numbers of continuous vias and slots such asthree, four, five, six, seven, eight, etc can also be used. Finally anynumber of metal levels can be interconnected to form the inductor.Therefore, in addition to the four levels of metal shown in FIG. 2,other embodiments can comprise interconnecting two, three, five, six,seven, and eight levels of metal to form the inductor.

Shown in FIG. 3 is a cross-section diagram taken through the plane BB′in FIG. 1. The continuous vias 130, 140, and 150 are shown between thevarious metal levels 90, 11, 11, and 120 connecting the various metallayers. The semiconductor 30, the first dielectric layer 40, the firstmetal layer 50, and a barrier layer 80 are also shown in FIG. 3.

Shown in FIG. 4( a) to FIG. 4( c) are cross-sectional diagramsillustrating a method for forming a contiguous via or slot and a metalline. As shown in FIG. 4( a) a metal layer 240 is formed in a firstdielectric layer 210. A barrier layer 80 is formed over the metal layer240 and the first dielectric layer 210. A second dielectric layer 220 isformed over the barrier layer and a barrier layer 80 is formed over thesecond dielectric layer 220. A third dielectric layer 230 is formed overthe barrier layer 80 and a barrier layer is formed over the thirddielectric layer 230. It should be noted that the use of the barrierlayers is optional. Following the formation of a barrier layer over thethird dielectric layer 230, a patterned photoresist layer 160 is formedover the barrier layer. The patterned photoresist layer will be used asan etch mask during the etching of the dielectric layers.

As shown in FIG. 4( b) a second patterned photoresist layer 180 isformed above the barrier layer following the etching of the slot 165through the dielectric layer 220 and 230 and various barrier layers 80.Prior to the formation of the patterned photoresist layer 180 the slot165 is partially filed with the material used to form a BARC layerbeneath the patterned photoresist layer. This partial filling of theslot 165 with BARC material is an optional step. Following the formationof the patterned photoresist layer 180 an opening is formed in the thirddielectric layer 230 using the patterned photoresist 180 as an etchmask. The second dielectric layer 220 may also be partially etched bythe etching process. Following the removal of all remaining photoresistand BARC material metal such as copper is formed in the remaining slot165 and the opening formed in the third dielectric layer 230. Theformation of metal results in a second metal layer 250 connected to thefirst metal layer by the continuous via or slot 260. The copper can beformed by first forming copper in the opening and remaining slot andremoving the excess copper from the structure using chemical mechanicalpolishing. In a similar manner other layers of metal and interconnectingcontinuous vias or slots can be formed to complete the formation of theinductor.

Although the present invention has been described with severalembodiments, various changes and modifications may be suggested to oneskilled in the art. It is intended that the present invention encompasssuch changes and modifications that follow within the scope of theappended claims.

1-11. (canceled)
 12. A method of forming an integrated circuit inductor,comprising: providing a semiconductor; forming a first metal layer of afirst length above said semiconductor; forming a second metal layer of asecond length above said first metal layer; forming a continuous via ofa third length interconnecting said first metal layer and said secondmetal layer to form an integrated circuit inductor wherein said thirdlength is greater than three percent of said first length.
 13. Themethod of claim 12 wherein said first metal is selected from a groupconsisting of copper and aluminum.
 14. The method of claim 12 whereinsaid second metal is selected from a group consisting of copper andaluminum.
 15. The method of claim 12 wherein said continuous via iscopper.